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Infineon Technologies CY7C1612KV18-333BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1612KV18-333BZC QDR II SRAM, 144 Mbit, 333 MHz

MPNCY7C1612KV18-333BZC
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Infineon CY7C1612KV18-333BZC, QDR II synchronous SRAM, 144 Mbit (8M x 18), 333 MHz clock, 1.7 V–1.9 V supply, 165-FBGA, commercial temperature.

$265.2828Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1612KV18-333BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 18

Product details

What this QDR II SRAM does in the system

Organized as 8M x 18, the 18-bit word width accommodates a 16-bit data payload plus two parity bits, a common requirement in networking packet buffers and telecom line-card lookup tables.

At 333 MHz the QDR II interface delivers a peak data rate of 666 million transfers per second per I/O pin (double data rate on both read and write ports). For a system designer this means the memory can keep up with a high-speed ASIC or FPGA memory controller without inserting wait states. The trade-off is that the 165-ball FBGA (15x17 mm body) demands careful signal-integrity layout — trace-length matching on the address and data busses, controlled impedance, and decoupling close to the supply balls.

Package and mounting: 165-FBGA

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