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Infineon Technologies CY7C1612KV18-300BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1612KV18-300BZXI 144Mbit QDR II SRAM, 300 MHz

MPNCY7C1612KV18-300BZXI
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Infineon CY7C1612KV18-300BZXI, 144Mbit QDR II synchronous SRAM, 8M x 18 organization, 300 MHz clock frequency, 1.7V-1.9V supply, parallel interface, 165-FBGA (15x17), -40°C to 85°C, Tray.

$332.2550Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1612KV18-300BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 18

Product details

The 300 MHz clock rate delivers a peak data bandwidth of 1.2 Gbps per I/O pin using the QDR II architecture, which dedicates separate read and write data ports to eliminate bus-turnaround dead cycles.

The 1.8V nominal rail is shared with many FPGA and ASIC core supplies, simplifying the power tree. Decoupling at the 165-FBGA (15x17) package should follow the manufacturer's recommended capacitor placement per the datasheet layout note — the fine-pitch BGA balls (0.8 mm pitch typical for this footprint) mean the VDD and VSS ball map dictates the via pattern and plane stitching.

The base product number CY7C1612 covers a family of density and speed variants; the -300BZXI suffix selects the 300 MHz speed grade in the 165-FBGA package with industrial temperature range.

Frequently asked questions

What is the clock frequency of CY7C1612KV18-300BZXI?

The CY7C1612KV18-300BZXI operates at a 300 MHz clock frequency, which is the speed grade encoded in the ordering suffix.