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Infineon Technologies CY7C1570KV18-550BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1570KV18-550BZXC 72Mbit DDR II+ SRAM, 550 MHz

MPNCY7C1570KV18-550BZXC
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Cypress CY7C1570KV18-550BZXC, 72Mbit Synchronous SRAM - DDR II+, 2M x 36 organization, 550 MHz clock frequency, 1.7V-1.9V supply, 165-ball FBGA (13x15 mm), 0°C to 70°C commercial temperature, Tray.

$284.8750Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1570KV18-550BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency550 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

550 MHz DDR II+ SRAM for high-throughput line cards

The Cypress CY7C1570KV18-550BZXC is a 72Mbit synchronous SRAM using DDR II+ architecture, organized as 2M x 36. Its 550 MHz clock rate delivers back-to-back read/write throughput without dead cycles, making it a fit for network switch buffers, telecom line cards, and high-end test equipment that need low-latency, high-bandwidth data storage.

Package and supply — what fits the board

The supply range is 1.7V to 1.9V — a narrow, low-voltage rail that demands tight regulation and adequate decoupling, typically a 1.8V rail with ±5% tolerance.

Frequently asked questions

What is the memory organization and clock speed of this SRAM?

It is organized as 2M x 36 (72Mbit total) and operates at a 550 MHz clock frequency using a DDR II+ synchronous interface, enabling high-throughput, low-latency data access.