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Infineon Technologies CY7C1565KV18-450BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1565KV18-450BZXC QDR II+ SRAM, 72 Mbit, 450 MHz

MPNCY7C1565KV18-450BZXC
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Infineon CY7C1565KV18-450BZXC, QDR II+ synchronous SRAM, 72 Mbit (2M x 36), 450 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15 mm), commercial temperature 0°C to 70°C.

$214.7337Ref. price · indicative, final on quote
Infineon Technologies CY7C1565KV18-450BZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1565KV18-450BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency450 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72 Mbit QDR II+ SRAM at 450 MHz — what it delivers for the datapath

The CY7C1565KV18-450BZXC: The 450 MHz clock rate gives a peak data bandwidth of 1.8 Gbps per I/O pin (double-data-rate on both read and write clocks), which is the figure that drives timing closure in high-throughput applications such as network packet buffers, switch look-up tables, and telecom line-card memory. The 1.7V to 1.9V core supply aligns with the lower-voltage I/O standards common on recent FPGAs and ASICs, reducing the number of separate power rails needed on the board.

165-FBGA footprint — layout and supply rails

The 1.7V to 1.9V VDD supply is separate from the I/O voltage (typically 1.4V or 1.8V, depending on the QDR II+ configuration), so the board needs two low-noise regulator outputs close to the SRAM. Decoupling should follow the manufacturer's recommendation: one 0.1 µF ceramic per supply pin pair, plus a bulk 10 µF on each rail.

Frequently asked questions

Can CY7C1565KV18-450BZXC be used as a replacement for CY7C1565KV18-400BZXC?

Yes — the 450 MHz variant is pin-compatible and shares the same 2M x 36 organisation and 165-FBGA footprint as the 400 MHz part. The higher speed grade provides additional timing margin or headroom for a faster bus clock, provided the memory controller can close timing at 450 MHz.

What are the typical applications for CY7C1565KV18-450BZXC?

This QDR II+ SRAM is designed for high-bandwidth, low-latency memory in networking equipment — packet buffers, switch fabric look-up tables, and traffic managers — as well as telecom line cards, test-and-measurement instruments, and FPGA-based compute accelerators where the separate read/write ports eliminate bus-turnaround dead cycles.