Skip to main content
Infineon Technologies CY7C15632KV18-450BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C15632KV18-450BZXI QDR II+ SRAM, 72 Mbit 450 MHz

MPNCY7C15632KV18-450BZXI
Active

Infineon CY7C15632KV18-450BZXI, QDR II+ synchronous SRAM, 72 Mbit (4M x 18), 450 MHz clock, parallel interface, 1.7V–1.9V supply, -40 to 85°C, 165-FBGA (13x15 mm), Tray.

$269.6875Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C15632KV18-450BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency450 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

450 MHz QDR II+ SRAM for high-throughput systems

Infineon's CY7C15632KV18-450BZXI is a 72 Mbit QDR II+ synchronous SRAM organized 4M x 18, clocked at 450 MHz. The QDR II+ architecture delivers separate read and write data ports, eliminating bus-turnaround dead cycles and sustaining full-rate back-to-back transactions — a requirement in network packet buffers, search engines, and high-end FPGA compute accelerators. The parallel memory interface and 1.7V to 1.9V core supply align with the I/O banks on modern FPGAs and ASICs.

Industrial temperature qualification

The 165-FBGA (13x15 mm) package keeps the signal path short for 450 MHz operation; the 1.7V to 1.9V supply range also covers the lower end of typical FPGA VCCIO rails. MSL and bake requirements follow the FBGA standard — plan for moisture sensitivity handling before reflow.

Active status — no LTB risk on the BOM line

No end-of-life notification, no last-time-buy window to track. The base product number CY7C15632 covers the wider density and speed variants should a future speed-grade migration be needed.