Infineon CY7C15632KV18-400BZXI, QDR II+ synchronous SRAM, 72Mbit (4M x 18), 400 MHz clock, parallel interface, 1.7V–1.9V supply, industrial -40°C to 85°C, 165-FBGA (13x15 mm), tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 400 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 4M x 18 |
The Infineon CY7C15632KV18-400BZXI is a 72Mbit synchronous SRAM built on the QDR II+ architecture, organized as 4M x 18 bits and clocked at 400 MHz.
A 165-ball FBGA (13x15 mm) package is the footprint; the array pitch and ball diameter dictate the via-in-pad and microvia stack-up for signal integrity at 400 MHz.
Infineon lists the CY7C15632KV18-400BZXI as obsolete.
Both share the same 72Mbit density, 4M x 18 organization, 400 MHz clock, 165-FBGA package, and 1.7V–1.9V supply. For an outdoor or factory-floor deployment the industrial-grade 'I' variant is the correct fit; the 'C' variant is for controlled indoor environments only.