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Infineon Technologies CY7C15632KV18-400BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C15632KV18-400BZC Cypress QDR II+ SRAM, 72 Mbit, 400 MHz

MPNCY7C15632KV18-400BZC
End of Life

Cypress CY7C15632KV18-400BZC, QDR II+ synchronous SRAM, 72 Mbit, 400 MHz, parallel interface, 1.7–1.9 V, 4M×18, 165-LBGA, tray, 0°C–70°C.

$183.0150Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CY7C15632KV18-400BZC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

400 MHz QDR II+ SRAM for high-throughput buffer applications

The Cypress CY7C15632KV18-400BZC is a 72 Mbit synchronous SRAM using QDR II+ architecture, clocked at 400 MHz over a parallel interface. Organized as 4M x 18, it is designed for high-bandwidth data buffering in networking, telecom, and test equipment where read and write operations occur on independent ports every clock cycle. The 1.7 V to 1.9 V supply rail and commercial temperature range (0°C to 70°C) confine it to controlled indoor environments — not a fit for extended-temperature or industrial backplanes without active cooling.

Frequently asked questions

Will CY7C15632KV18-400BZC drop into a panel specified around CY7C1562XV18-450BZXC without rewiring?

Both parts share the same 72 Mbit density, 4M x 18 organization, parallel interface, and 1.7 V supply range. The CY7C1562XV18-450BZXC runs at 450 MHz versus 400 MHz. Pin compatibility depends on the exact ball map — the package suffix differs (BZXC vs BZC). Verify the footprint against your PCB layout before substitution.