72 Mbit QDR II+ SRAM at 400 MHz
The Infineon CY7C1545KV18-400BZXI is a 72 Mbit synchronous SRAM organized as 2M x 36, using the QDR II+ architecture with a 400 MHz clock. This is a high-bandwidth memory device intended for applications requiring sustained read and write throughput on every clock edge — typically network processors, search engines, and high-speed data buffers where the bus cannot stall for a turn-around cycle. The 1.7 V to 1.9 V core supply and parallel interface place it in the low-voltage synchronous SRAM class.
The surface-mount assembly requires a controlled reflow profile per JEDEC J-STD-020 for the package's moisture sensitivity level — the tray packaging indicates the device is shipped in anti-static trays, not tape-and-reel, which affects the pick-and-place feeder setup. The 1.7 V to 1.9 V supply rail must be clean and within 5 % of the nominal 1.8 V target. The parallel interface with 36 data lines plus address and control signals demands careful signal-integrity simulation at 400 MHz; the trace length matching and impedance control are non-negotiable for reliable operation at this speed.
The base product number CY7C1545 identifies the family; the suffix KV18-400BZXI encodes the voltage range (1.8 V core), speed grade (400 MHz), package (165-ball FBGA), and temperature range (industrial). Sourcing is confirmed against an RFQ through independent distribution channels.