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Infineon Technologies CY7C1525V18-200BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1525V18-200BZXC 72Mbit QDR II SRAM, 200 MHz

MPNCY7C1525V18-200BZXC
Obsolete

Cypress CY7C1525V18-200BZXC, 72Mbit QDR II synchronous SRAM, 200 MHz clock, 8M x 9 organization, Parallel interface, 1.7V-1.9V supply, 165-FBGA (13x15 mm), 0°C to 70°C commercial temperature, Tray.

$119.4500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1525V18-200BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 9

Product details

72 Mbit QDR II SRAM — 200 MHz, 8M x 9, commercial temp

The Cypress CY7C1525V18-200BZXC is a 72 Mbit synchronous SRAM built on QDR II (Quad Data Rate) architecture, organized as 8M words by 9 bits. The 200 MHz clock rate delivers back-to-back read and write transactions without bus-turnaround dead cycles — the defining advantage of the QDR II interface over traditional NoBL or DDR SRAM in high-throughput applications like network packet buffers, FPGA cache, and telecom line cards. Supply range is 1.7 V to 1.9 V, and the part is housed in a 165-ball FBGA (13x15 mm) for surface-mount assembly.

Obsolete — last-time-buy sourcing required

Package and assembly — 165-FBGA

The 165-ball FBGA (13x15 mm) is a fine-pitch BGA. Requires reflow soldering with a controlled profile; post-solder X-ray inspection is recommended.

Frequently asked questions

What is CY7C1525V18-200BZXC's listed technology?

It is a synchronous QDR II (Quad Data Rate) SRAM — volatile memory with separate read and write ports, eliminating bus-turnaround dead cycles. The 200 MHz clock yields 400 MT/s per I/O.