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Infineon Technologies CY7C1525KV18-300BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1525KV18-300BZC QDR II SRAM, 72 Mbit, 300 MHz

MPNCY7C1525KV18-300BZC
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Infineon CY7C1525KV18-300BZC, QDR II synchronous SRAM, 72 Mbit, 300 MHz clock, 1.7V–1.9V supply, 165-FBGA (13x15), 0°C to 70°C.

$148.6800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1525KV18-300BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 9

Product details

72 Mbit QDR II SRAM at 300 MHz — what the bus sees

The ninth bit per word gives you a parity lane for each byte — common in networking line cards and test equipment where a single-bit error on a buffer read stalls the pipeline. Clocked at 300 MHz, the QDR II architecture delivers back-to-back read and write on separate buses, so the controller never stalls for bus-turnaround dead cycles the way a common DDR SRAM does.

300 MHz clock — timing closure and signal integrity

At 300 MHz the clock period is 3.3 ns. The QDR II interface is source-synchronous with a separate read clock and write clock, so the FPGA or ASIC controller must match the PCB trace delay within a few hundred picoseconds. The 165-FBGA (13x15) package keeps the signal path short, but the board layout needs controlled-impedance traces and matched-length routing between the memory and the controller.

Frequently asked questions

Where can I buy CY7C1525KV18-300BZC?

This part is available to order through independent distribution. Submit an RFQ to confirm current pricing and availability — lead time and stock are confirmed at quote time.