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Infineon Technologies CY7C1525KV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1525KV18-250BZXI 72Mbit QDR II SRAM, 250 MHz

MPNCY7C1525KV18-250BZXI
Active

Infineon CY7C1525KV18-250BZXI, 72Mbit QDR II synchronous SRAM, 8M x 9 organization, 250 MHz clock, parallel interface, 1.7V-1.9V supply, -40°C to 85°C, 165-FBGA (13x15), tray.

$123.9000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1525KV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 9

Product details

72 Mbit QDR II SRAM at 250 MHz — what the clock rate buys the system

The Infineon CY7C1525KV18-250BZXI is a 72 Mbit synchronous QDR II SRAM organized 8M x 9, clocked at 250 MHz over a parallel interface. That clock rate defines the peak read/write bandwidth the memory controller must budget for — at 250 MHz the QDR II architecture delivers back-to-back transactions on every edge, eliminating dead cycles between read and write turns. For a system architect sizing a high-throughput data buffer (network processor, radar signal chain, test equipment), the 250 MHz rating sets the minimum acceptable controller timing closure and trace-length matching across the 165-ball FBGA footprint.

The 13 mm x 15 mm FBGA body uses a standard BGA array.

For the procurement buyer evaluating a BOM line, this carries no last-time-buy deadline and no forced alternate qualification.

Frequently asked questions

Is CY7C1525KV18-250BZXI active or obsolete?

The manufacturer lists this part as Active.