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Infineon Technologies CY7C1518KV18-333BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1518KV18-333BZXC 72Mbit DDR II SRAM, 333 MHz

MPNCY7C1518KV18-333BZXC
Active

Infineon Technologies CY7C1518KV18-333BZXC, Synchronous DDR II SRAM, 72Mbit, 4M x 18, 333 MHz, 1.7V-1.9V, 165-FBGA, Tray.

$190.9250Ref. price · indicative, final on quote
Infineon Technologies CY7C1518KV18-333BZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1518KV18-333BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72 Mbit DDR II SRAM at 333 MHz — the throughput ceiling

The CY7C1518KV18-333BZXC is a 72 Mbit synchronous DDR II SRAM organized as 4M x 18 bits, clocked at 333 MHz. At that clock rate the DDR interface delivers two data transfers per cycle, so the peak read/write bandwidth into the 18-bit bus is 666 MT/s — the limiting factor is the controller's ability to keep the pipeline full, not the memory itself. The 1.7 V to 1.9 V core supply matches the low-voltage SRAM rail common on networking and telecom line cards.

Package and board-fit — 165-ball FBGA

The supplier device package is 165-FBGA (13x15), so the footprint matches the industry-standard 165-ball FBGA land pattern. Supplied in tray format, the part is suited for manual or automated pick-and-place in prototype and low-to-medium volume production. The tray keeps the balls protected and the parts aligned for the feeder.

Infineon lists the CY7C1518KV18-333BZXC as Active (current production).