Skip to main content
Infineon Technologies CY7C1518KV18-333BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1518KV18-333BZI 72Mbit DDR II SRAM, 333 MHz, Obsolete

MPNCY7C1518KV18-333BZI
Obsolete

Infineon Technologies CY7C1518KV18-333BZI, DDR II+ Synchronous SRAM, 72Mbit, 4M x 18, 333 MHz, 1.7-1.9 V, -40 to +85°C, 165-FBGA (13x15 mm), Tray.

$137.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1518KV18-333BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72 Mbit DDR II+ SRAM at 333 MHz

The CY7C1518KV18-333BZI is a 72 Mbit synchronous SRAM with a DDR II+ interface, organized as 4M x 18. The 333 MHz clock rate delivers a peak read/write bandwidth that suits high-throughput packet buffers, cache, and DSP memory pools.

The supplier device package is 165-FBGA (13x15). Supplied in tray format — suitable for hand-place prototypes or pick-and-place reflow. The package is surface-mount; no special handling beyond standard BGA moisture bake (MSL level not stated in this record).

No official successor or pin-compatible second source is listed in the available record.

Memory interface and timing

The parallel memory interface uses DDR II+ signaling — data is clocked on both edges of the 333 MHz clock, effectively doubling the data rate. The 18-bit wide data bus (4M x 18) allows a single chip to serve a 16-bit data word plus parity or ECC bits.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1518KV18-333BZI?

A functional replacement would require a board-level evaluation of pinout and timing.