72 Mbit QDR II SRAM at 300 MHz — BOM-fit note
The CY7C1515KV18-300BZXI is a 72 Mbit QDR II synchronous SRAM organised as 2M x 36, clocked at 300 MHz. The parallel interface delivers read and write data on both clock edges, so the effective data rate is 600 MT/s per I/O pin. The 1.7 V to 1.9 V core supply keeps the I/O within the 1.8 V logic family — a design that already runs a 1.8 V backplane or FPGA bank avoids a separate regulator.
300 MHz clock and 2M x 36 organisation — what they mean for the memory controller
At 300 MHz the QDR II interface demands tight timing closure on the PCB. The 36-bit data word (2M x 36) means the part writes or reads 36 bits per clock edge — 72 bits per full cycle. A controller that expects a 36-bit bus width matches this part without ganging multiple devices. The 165-FBGA package (13x15 mm) uses a 1.0 mm ball pitch — a standard 4-layer PCB with via-in-pad or dog-bone fan-out handles the routing. The supply voltage tolerance (1.7 V to 1.9 V) gives the regulator about 100 mV of margin on a nominal 1.8 V rail, which is enough to absorb IR drop across the board without a local LDO.
Active lifecycle — sourcing posture
Infineon lists this part as Active. The base product number CY7C1515 covers the family; the suffix KV18-300BZXI identifies the 1.8 V, 300 MHz, industrial-temperature, 165-FBGA variant.