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Infineon Technologies CY7C1514KV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1514KV18-300BZXC QDR II SRAM, 72Mbit, 300 MHz, 165-LBGA

MPNCY7C1514KV18-300BZXC
Obsolete

Infineon CY7C1514KV18-300BZXC, 72Mbit synchronous QDR II SRAM, 2M x 36, 300 MHz clock, parallel interface, 1.7–1.9 V supply, 165-LBGA (13x15 mm), commercial 0°C–70°C.

Infineon Technologies CY7C1514KV18-300BZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1514KV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

QDR II SRAM at 300 MHz — what the clock buys you

The Infineon CY7C1514KV18-300BZXC is a 72Mbit synchronous QDR II SRAM organized as 2M x 36, clocked at 300 MHz. That 300 MHz clock delivers back-to-back read-write throughput without dead cycles — the QDR II architecture eliminates bus-turnaround gaps, so the part sustains full-rate data transfers on every edge. For a line card buffer or a high-speed cache in a networking ASIC, that means the memory bus stops being the bottleneck.

Housed in a 165-LBGA (13x15 mm body). Surface-mount only — no socket options in production.

Memory organization — 2M x 36

The 2M x 36 organization provides a 36-bit wide data bus. The parallel interface is fixed.

Frequently asked questions

What package does CY7C1514KV18-300BZXC come in?

The part ships in a 165-LBGA (13x15 mm body), also described as 165-FBGA. It is supplied in tray packaging.