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Infineon Technologies CY7C1514KV18-250BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1514KV18-250BZI QDR II SRAM, 72Mbit, 250 MHz

MPNCY7C1514KV18-250BZI
Active

Infineon Technologies CY7C1514KV18-250BZI, QDR II synchronous SRAM, 72Mbit, 2M x 36 organization, 250 MHz clock, 1.7V-1.9V supply, -40°C to +85°C, 165-FBGA (13x15 mm), Tray.

$139.3750Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1514KV18-250BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72Mbit QDR II SRAM at 250 MHz — what the clock rate means for the memory bus

The CY7C1514KV18-250BZI is a 72Mbit Quad Data Rate II synchronous SRAM organized as 2M x 36. The 250 MHz clock drives a read and a write data transfer on each edge, so the memory bus delivers 500 million transactions per second per port — two independent ports (read and write) run simultaneously, each at that rate. That bandwidth matters when the processor or ASIC on the other side of the bus needs to read a lookup table while writing a new result in the same cycle — no arbitration stall.

Industrial temperature and 165-FBGA — board-fit constraints

The parallel memory interface is a 1.8V HSTL-type I/O — the reference voltage Vref must be generated locally with a 0.1% resistor divider, not tapped from the supply rail, to maintain the input threshold accuracy across the temperature range.

Active lifecycle — sourcing posture

Infineon lists this part as Active.