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Infineon Technologies CY7C1513KV18-333BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1513KV18-333BZXC QDR II SRAM, 72 Mbit, 333 MHz

MPNCY7C1513KV18-333BZXC
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Infineon CY7C1513KV18-333BZXC synchronous QDR II SRAM, 72 Mbit (4M x 18), 333 MHz clock frequency, 1.7V–1.9V supply, 165-FBGA (13x15 mm) package, commercial temperature range 0°C to 70°C.

$136.3750Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1513KV18-333BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

333 MHz QDR II SRAM for high-throughput buffer applications

The CY7C1513KV18-333BZXC is a 72 Mbit synchronous QDR II SRAM organized as 4M x 18 bits, clocked at 333 MHz.

At 333 MHz, each port runs at 333 MT/s.

Package and PCB footprint

The 1.7V to 1.9V VDD rail needs a dedicated low-noise LDO or switcher with good transient response, and the core decoupling should follow the datasheet's recommended capacitor array — typically a mix of 0.1 µF and 1 µF MLCCs placed within 2 mm of each VDD ball.

Frequently asked questions

What is the clock frequency of CY7C1513KV18-333BZXC?

The CY7C1513KV18-333BZXC operates at a 333 MHz clock frequency, giving each port 333 MT/s throughput on the QDR II bus.