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Infineon Technologies CY7C1512V18-167BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1512V18-167BZC QDR II SRAM, 72Mbit, 167 MHz

MPNCY7C1512V18-167BZC
Obsolete

Infineon Technologies CY7C1512V18-167BZC QDR II SRAM, 72Mbit (4M x 18), 167 MHz, 1.7-1.9V, 165-FBGA, Tray.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1512V18-167BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency167 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72Mbit QDR II SRAM — 167 MHz, 4M x 18 organization

The CY7C1512V18-167BZC is a 72Mbit QDR II synchronous SRAM from Infineon, organized as 4M words by 18 bits. It operates at a 167 MHz clock frequency with a parallel interface, delivering the high random-access throughput that network processors, line cards, and high-end test equipment demand. The supply range is 1.7 V to 1.9 V, and the device is specified for the commercial temperature range of 0°C to 70°C.

The 0.80 mm ball pitch requires a controlled-impedance PCB stack-up — the high-speed QDR II bus edges demand matched trace lengths and proper decoupling near the supply balls.

Frequently asked questions

What is the memory organization of the CY7C1512V18-167BZC?

The device is organized as 4M words by 18 bits, for a total of 72 Mbit. It uses a QDR II synchronous SRAM architecture with a parallel interface.

What package does the CY7C1512V18-167BZC use?

It comes in a 165-ball FBGA (15x17 mm body), surface-mount, supplied in tray packaging.