Skip to main content
Infineon Technologies CY7C1512KV18-200BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1512KV18-200BZXC 72Mbit QDR II SRAM, 200 MHz

MPNCY7C1512KV18-200BZXC
Obsolete

Cypress CY7C1512KV18-200BZXC, QDR II synchronous SRAM, 72Mbit (4M x 18), 200 MHz clock, parallel interface, 1.7V–1.9V supply, 165-LBGA, 0°C–70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1512KV18-200BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

The CY7C1512KV18-200BZXC: It clocks at 200 MHz on the parallel interface, delivering back-to-back read and write bursts without dead cycles — the defining advantage of the QDR II protocol over traditional DDR SRAM.

200 MHz clock and QDR II — what the throughput means for the bus

At 200 MHz the QDR II interface delivers back-to-back read and write bursts without dead cycles, using separate read and write ports.

Frequently asked questions

Is CY7C1512KV18-200BZXC compatible with QDR II+?

The CY7C1512KV18-200BZXC is a QDR II device, not QDR II+. While the 165-FBGA footprint may be shared, the protocol timing and ODT (on-die termination) differ between QDR II and QDR II+. Direct substitution without controller redesign is not recommended. Consult the respective datasheets for the electrical and timing differences.