Infineon Technologies CY7C1482BV33-200BZI synchronous SRAM, 72Mbit (4M x 18), 200 MHz clock, 3 ns access time, 3.135-3.6 V supply, -40 to +85 °C, 165-LBGA (15x17 mm), Bulk.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3.135V ~ 3.6V |
| Clock frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous, SDR |
| Access time | 3 ns |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 4M x 18 |
The CY7C1482BV33-200BZI: Organized as 4M x 18, this is a synchronous SRAM with a 200 MHz clock and a 3 ns access time — the pipelined architecture lets the controller issue a new address every cycle while the read data from the previous cycle is still being driven out.
It is a 72 Mbit synchronous SRAM organized as 4M x 18, with a 200 MHz clock and a 3 ns access time.