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Infineon Technologies CY7C1480BV33-250BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1480BV33-250BZI Infineon 72Mbit SRAM 250 MHz 165-FBGA

MPNCY7C1480BV33-250BZI
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Infineon CY7C1480BV33-250BZI synchronous SRAM, 72Mbit (2M x 36), 250 MHz clock, 3 ns access, 3.135V–3.6V supply, -40°C to 85°C, 165-FBGA.

$263.0600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1480BV33-250BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72Mbit synchronous SRAM at 250 MHz

The CY7C1480BV33-250BZI is a 72Mbit synchronous SRAM organized as 2M x 36, clocked at 250 MHz with a 3 ns access time — a fit for high-throughput FPGA block RAM expansion or packet buffer designs where the bus must run at the core clock rate without wait states. Supply range is 3.135V to 3.6V, so it sits on a 3.3V rail with margin for ripple — no separate VIO or VDDQ plane needed.

Industrial temperature and FBGA footprint

Housed in a 165-ball FBGA measuring 15x17 mm, the 1.0 mm ball pitch requires a 4-layer PCB minimum for signal fan-out — the inner layers carry the VDD and VSS planes that keep the supply impedance under 1 ohm at 250 MHz.

Frequently asked questions

Is CY7C1480BV33-250BZI compatible with 3.3V logic?

Yes — the supply range is 3.135V to 3.6V, so it runs directly on a 3.3V rail without a level shifter.

What is the difference between CY7C1480BV33-250BZI and CY7C1480BV33-250BZX?

The suffix BZI vs BZX typically indicates a packaging or temperature variant — both share the same 72Mbit density, 250 MHz clock, and 165-FBGA footprint. Confirm the exact suffix with the datasheet to match the BOM's temperature grade and reel/tray requirement.