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Infineon Technologies CY7C1470BV33-200BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1470BV33-200BZI Infineon NoBL SRAM, 72Mbit, 200 MHz

MPNCY7C1470BV33-200BZI
Obsolete

Infineon (ex-Cypress) NoBL synchronous SRAM, 72 Mbit organized 2M x 36, 3 ns access time, 200 MHz clock, 3.135V–3.6V supply, -40°C–85°C, 165-LBGA (15x17 mm), Tray.

$115.1900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1470BV33-200BZI specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

For existing designs still needing this exact order code, supply is limited to surplus and broker inventory.

3 ns access time at 200 MHz — the performance envelope

The 200 MHz clock and 3 ns access time eliminate dead cycles between read and write turns, delivering back-to-back throughput that matters in networking packet buffers, telecom line cards, and high-end test equipment. The 72 Mbit density organized as 2M x 36 gives a 36-bit data bus width, sized for 32-bit word plus parity or ECC overhead.

The 165-LBGA (15x17 mm) package is a fine-pitch BGA; boards designed for this footprint need the same ball map as the 165-FBGA variant.

Frequently asked questions

Where can I buy CY7C1470BV33-200BZI?

The CY7C1470BV33-200BZI is obsolete and sourced through independent distribution.