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Infineon Technologies CY7C1470BV25-200BZCT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1470BV25-200BZCT NoBL SRAM, 72Mbit, 200 MHz, 2.5V

MPNCY7C1470BV25-200BZCT
Obsolete

Cypress CY7C1470BV25-200BZCT, NoBL™ series, Synchronous SDR SRAM, 72Mbit (2M x 36), 200 MHz clock, 3 ns access time, Parallel interface, 2.375V ~ 2.625V supply, 0°C ~ 70°C, 165-LBGA.

Infineon Technologies CY7C1470BV25-200BZCT datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1470BV25-200BZCT specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage2.375V ~ 2.625V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

At 200 MHz the clock period is 5 ns, and the 3 ns access time leaves 2 ns for board trace delay, clock skew, and setup hold at the controller. That is a tight but workable margin for a point-to-point SRAM link on a well-laid-out PCB. The 2.5 V I/O swings faster than 3.3 V, which helps edge rates but also reduces noise margin — keep the supply clean and the decoupling tight.

Procurement must source through the surplus and broker channel.

Housed in a 165-ball FBGA (15x17 mm body), surface-mount only.

Frequently asked questions

What is the replacement for CY7C1470BV25-200BZCT?

No official replacement order code is listed for the CY7C1470BV25-200BZCT. For a functionally equivalent part, look for other 2.5 V, 200 MHz, 72 Mbit NoBL synchronous SRAMs in the same 165-FBGA footprint — but verify pin compatibility against the datasheet before committing the BOM.