Infineon NoBL™ series SRAM - Synchronous, SDR, 72Mbit (2M x 36), 200 MHz clock frequency, 3 ns access time, 2.375V ~ 2.625V supply, parallel interface, -40°C ~ 85°C, 100-LQFP, Tray.
| Parameter | Value |
|---|---|
| Series | NoBL™ |
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.375V ~ 2.625V |
| Clock frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, SDR |
| Access time | 3 ns |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 100-LQFP |
| Memory organization | 2M x 36 |
No derating needed across that span for the 200 MHz clock — the 3 ns access time holds over the full temperature range.
Housed in a 100-lead LQFP (14x20 mm body), surface-mount soldered. The TQFP footprint is common across the NoBL™ density family.
Infineon lists the CY7C1470BV25-200AXI as Obsolete. No official successor order code is published.
Yes, Infineon has marked the CY7C1470BV25-200AXI as Obsolete. There is no announced last-time-buy window; remaining stock moves through independent distribution.
72Mbit synchronous SRAM organized 2M x 36, 200 MHz clock frequency, 3 ns access time, 2.375 V to 2.625 V supply, parallel interface, -40°C to 85°C operating temperature, 100-lead LQFP package.