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Infineon Technologies CY7C1444KV33-250AXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1444KV33-250AXC 36Mbit SRAM, 250 MHz, 2.6 ns

MPNCY7C1444KV33-250AXC
Active

Infineon CY7C1444KV33-250AXC, 36Mbit synchronous SDR SRAM, 250 MHz clock, 2.6 ns access time, 1M x 36 organization, 3.135V–3.6V supply, 100-TQFP (14x20), 0°C to 70°C.

$48.5658Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1444KV33-250AXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time2.6 ns
Memory size36Mbit
Memory formatSRAM
Case100-LQFP
Memory organization1M x 36

Product details

36 Mbit synchronous SRAM for high-throughput data paths

This SRAM targets networking, telecom, and high-end computing applications where a wide datapath and deterministic read latency are required. The 36-bit word width maps directly to a 32-bit data bus plus parity or ECC overhead without external muxing.

250 MHz clock and 2.6 ns access — timing budget considerations

Rated for a 250 MHz clock frequency, the CY7C1444KV33-250AXC delivers a peak data rate of 9 Gbit/s on a 36-bit bus. The 2.6 ns access time from clock edge defines the read-to-data-valid window; at 250 MHz the cycle period is 4 ns, leaving 1.4 ns of setup/hold margin for the receiving logic. This margin shrinks with board trace delay and clock skew, so signal-integrity simulation on the address/control lines is recommended before layout sign-off. The synchronous interface uses a single clock input; all address, data, and control signals are registered on the rising edge. No burst counter or DLL is required, simplifying the clock-tree topology compared to DDR variants.

Package and footprint — 100-TQFP (14x20 mm)

The 100-TQFP package with a 14x20 mm body and 0.5 mm pitch is a common footprint shared across the CY7C1444KV33 family. For a 250 MHz part, place a 0.1 µF decoupling capacitor within 2 mm of each VDD/VDDQ pin pair and use a solid ground plane on layer 2.

Lifecycle status — active, no LTB risk

No last-time-buy or end-of-life notification has been issued.

Frequently asked questions

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