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Infineon Technologies CY7C1426KV18-250BZCT — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1426KV18-250BZCT QDR II SRAM, 36Mbit, 250 MHz

MPNCY7C1426KV18-250BZCT
End of Life

Cypress (Infineon) CY7C1426KV18-250BZCT, 36Mbit synchronous QDR II SRAM, organized 4M x 9, 250 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15 mm), 0°C–70°C, Tape & Reel.

$37.1000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1426KV18-250BZCT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

QDR II SRAM for high-throughput line cards

The CY7C1426KV18-250BZCT is a 36 Mbit synchronous QDR II SRAM organized 4M x 9, clocked at 250 MHz over a parallel interface, running from a 1.7 V to 1.9 V supply.

Frequently asked questions

What compliance documentation does this part carry?

The evidence does not list RoHS, REACH, UL, or IEC certification status for this specific order code. The part is supplied on tape and reel, which is standard for production-volume surface-mount assembly. Request compliance documentation at quote time if your BOM requires it.