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Infineon Technologies CY7C1426AV18-250BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1426AV18-250BZC QDR II SRAM, 36Mbit, 250 MHz, Obsolete

MPNCY7C1426AV18-250BZC
Obsolete

Infineon (Cypress) CY7C1426AV18-250BZC, QDR II synchronous SRAM, 36Mbit (4M x 9), 250 MHz clock, 1.7V–1.9V supply, parallel interface, 165-FBGA (15x17 mm), 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1426AV18-250BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

Its 250 MHz clock rate delivers back-to-back read and write transactions on separate ports without dead cycles, making it a fit for high-throughput data buffers in networking switches, baseband processors, and test equipment where the bus turnaround overhead of traditional SRAM would cost bandwidth.

Package and supply — design-in checklist

Housed in a 165-ball FBGA (15 x 17 mm body), this part is surface-mount only and requires a controlled reflow profile.

Frequently asked questions

What is the replacement for CY7C1426AV18-250BZC?

No official replacement part number is listed in the record. For new designs, consider current-generation QDR II+ or QDR IV synchronous SRAMs from Infineon that offer similar density and 250 MHz clock rates in a 165-ball FBGA package, but verify pin compatibility and supply voltage (1.7 V–1.9 V) against your layout.