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Infineon Technologies CY7C1425KV18-300BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1425KV18-300BZC Cypress 36Mbit QDR-II SRAM, 300 MHz

MPNCY7C1425KV18-300BZC
Obsolete

Cypress CY7C1425KV18-300BZC, 36 Mbit synchronous QDR-II SRAM, 300 MHz clock, 4M×9 organization, 1.7–1.9 V supply, surface-mount 165-FBGA, 0–70 °C operating range, tray.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1425KV18-300BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

QDR-II SRAM at 300 MHz — what the clock buys you

Its 300 MHz clock rate delivers back-to-back read and write operations with zero dead cycles between bus turns — the QDR-II architecture uses separate read and write data ports, so the bus never idles during direction changes. That matters in high-throughput data-path designs like network packet buffers, line cards, or test equipment where every clock cycle counts.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1425KV18-300BZC?

No official pin-compatible successor or second-source alternate is listed in the lifecycle record. For a drop-in replacement, search for a QDR-II SRAM with 36 Mbit density, 4M x 9 organization, and a 165-FBGA package — but verify the ball map against the Cypress package drawing before committing the board.