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Infineon Technologies CY7C1425AV18-200BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1425AV18-200BZC Infineon 36Mbit QDR II SRAM, 200 MHz

MPNCY7C1425AV18-200BZC
Obsolete

Infineon Technologies CY7C1425AV18-200BZC QDR II synchronous SRAM, 36Mbit (4M x 9), 200 MHz clock, parallel interface, 1.7V-1.9V supply, 165-FBGA (15x17), tray.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1425AV18-200BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

36Mbit QDR II SRAM — 200 MHz clock, 165-FBGA package

The CY7C1425AV18-200BZC is a 36Mbit QDR II synchronous SRAM organised as 4M x 9, clocked at 200 MHz, with a parallel interface running on a 1.7V to 1.9V core supply. Housed in a 165-ball FBGA measuring 15x17 mm, it is a surface-mount volatile memory for high-throughput data buffering in networking, telecom, and test equipment where QDR II's separate read and write data ports eliminate bus-turnaround dead cycles.

Obsolete — sourcing through surplus and broker channels

No pin-compatible drop-in replacement is published by the manufacturer.

Frequently asked questions

What is the memory organisation and clock speed of CY7C1425AV18-200BZC?

It is a 36Mbit QDR II SRAM organised as 4M x 9, with a 200 MHz clock frequency and a parallel interface.