The CY7C1420KV18-250BZXI is a 36Mbit synchronous DDR II SRAM from Infineon, organized as 1M x 36. It clocks at 250 MHz, which means back-to-back read/write cycles without dead bus turns — the DDR II architecture transfers data on both clock edges, effectively doubling throughput per pin. This part targets networking line cards, telecom baseband processors, and high-end test equipment where a large, fast lookup table or packet buffer sits between the ASIC and the backplane.
At 250 MHz, the DDR II interface delivers a 500 MHz effective data rate on a 36-bit-wide bus. That is roughly 18 Gbit/s raw bandwidth — enough to keep a 10 GbE line card's forwarding engine fed without external FIFO cascading. The clock-to-data timing window is tight; the PCB layout needs matched trace lengths and controlled impedance (typically 50 Ω single-ended) across all 36 data lines plus the clock and control signals. The 165-ball BGA (13x15 mm) helps by keeping signal paths short, but the via count on a four-layer board will push you toward six layers if you route all bits on the top two signal layers.
Infineon lists the CY7C1420KV18-250BZXI as Active. The base product number CY7C1420 covers multiple speed grades and temperature variants; the -250BZXI suffix picks the 250 MHz industrial-grade version in a 165-FBGA tray. If your allocation window tightens, the same base number in a commercial temperature grade (CY7C1420KV18-250BZXC) is pin-compatible — just check the ambient temperature range of your enclosure.
The footprint requires a solder-mask-defined pad with a 0.45 mm opening. The Tray shipping medium is standard for BGA devices — no tape-and-reel option listed, so pick-and-place feeders need a tray handler or a custom pocket tape.