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Infineon Technologies CY7C1420KV18-250BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1420KV18-250BZXC DDR II SRAM, 36Mbit, 250 MHz

MPNCY7C1420KV18-250BZXC
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Infineon CY7C1420KV18-250BZXC, DDR II synchronous SRAM, 36Mbit (1M x 36), 250 MHz clock, 1.7V-1.9V supply, 165-FBGA (13x15 mm), commercial temperature 0°C to 70°C.

$37.1000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1420KV18-250BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

250 MHz DDR II SRAM for high-throughput line cards

The Infineon CY7C1420KV18-250BZXC is a 36Mbit DDR II synchronous SRAM organized as 1M x 36, clocked at 250 MHz, and supplied at 1.7V to 1.9V. This is a double-data-rate device — data transfers on both edges of the clock — which effectively doubles the bandwidth per pin compared to a single-data-rate SRAM at the same frequency. The 165-ball FBGA (13x15 mm) footprint keeps the signal path short but demands a controlled-impedance PCB stackup and careful BGA rework planning.

Commercial temperature — indoor systems only

It is not specified for outdoor base stations, factory-floor controllers, or automotive applications where the ambient may drop below freezing or exceed 70°C.

Frequently asked questions

Is CY7C1420KV18-250BZXC obsolete or end-of-life?

No.