DDR II SRAM at 250 MHz — system memory bandwidth
The CY7C1420KV18-250BZCT is a 36 Mbit synchronous DDR II SRAM from Infineon (formerly Cypress), organized as 1M x 36 bits and clocked at 250 MHz. The DDR II interface transfers data on both clock edges, delivering a peak bandwidth of 500 million 36-bit words per second — this is the raw throughput the memory controller sees, not a theoretical ceiling. The 1.7 V to 1.9 V supply rail (1.8 V nominal) and the parallel memory interface mean this part fits into a dedicated SRAM bus with its own voltage domain, separate from the core logic supply.
165-FBGA footprint and board integration
Housed in a 165-ball LBGA (13x15 mm body), the CY7C1420KV18-250BZCT uses a fine-pitch BGA that requires controlled impedance traces for the 250 MHz DDR interface. The supplier device package is 165-FBGA (13x15) — the ball map and recommended land pattern are in the Cypress/Infineon package drawing, not the datasheet parametric table. Tape-and-reel packaging supports automated pick-and-place for volume assembly.
Active lifecycle — sourcing posture
For a BOM hedge, the 36 Mbit x36 DDR II SRAM market includes functionally equivalent parts from Renesas (IDT) and GSI Technology, but each has a different package and ball-out — a board spin is required to cross.