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Infineon Technologies CY7C1420JV18-300BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1420JV18-300BZC SRAM, 36Mbit DDR II, 300 MHz

MPNCY7C1420JV18-300BZC
Obsolete

Cypress Infineon CY7C1420JV18-300BZC, 36Mbit synchronous DDR II SRAM, 1M x 36 organization, 300 MHz clock, 1.7–1.9V supply, 165-FBGA (15x17mm), 0°C to 70°C. End-of-life.

Infineon Technologies CY7C1420JV18-300BZC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1420JV18-300BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

The Cypress Infineon CY7C1420JV18-300BZC is a 36 Mbit synchronous DDR II SRAM organized as 1M x 36, clocked at 300 MHz, operating from 1.7 V to 1.9 V. This part is designed for high-bandwidth, low-latency cache or buffer applications in networking switches, telecom line cards, and FPGA-based signal processing where the 36-bit wide word matches a processor or FPGA data bus directly — no external byte-lane mux needed.

165-ball FBGA, 15x17 mm body, 1.0 mm ball pitch. Surface-mount only; requires a controlled reflow profile per JEDEC for the lead-free solder balls.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1420JV18-300BZC?

No official pin-compatible second source or successor is listed in the record. For a drop-in replacement, check the wider CY7C1420 family (same base product number) for other speed or temperature grades, but verify pinout and timing against the datasheet before committing a BOM.