The Infineon CY7C1418KV18-250BZXI is a 36Mbit synchronous DDR II SRAM organized as 2M x 18. It clocks at 250 MHz, uses a parallel interface, and operates from a 1.7V to 1.9V supply. This is a volatile memory part built for high-bandwidth data buffering in networking gear, telecom line cards, and test equipment where every clock cycle counts.
The 250 MHz clock rate on a DDR II SRAM means data transfers on both edges, giving an effective 500 MT/s throughput on the data bus. The 2M x 18 organization (36Mbit total) gives you an 18-bit wide word per access — typical for a 16-bit data path plus parity or ECC bit. That width suits designs that need a clean, wide memory bus without external muxing.
The 165-FBGA (13x15 mm) package is a fine-pitch BGA — not a field-swap candidate; you need a reflow oven and X-ray inspection for the joints. No lab, no bench, let us go — but bring the hot-air station if you are doing rework.
That means Infineon has issued a final purchase window; once that closes, the part will no longer be manufactured. If you have an active design using this exact density and speed grade, now is the time to secure your lifetime buy or qualify a drop-in alternative.
