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Infineon Technologies CY7C1418KV18-250BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1418KV18-250BZXC 36Mbit DDR II SRAM, 250 MHz

MPNCY7C1418KV18-250BZXC
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Cypress CY7C1418KV18-250BZXC, 36Mbit Synchronous DDR II SRAM, 2M x 18 organization, 250 MHz clock, 1.7V-1.9V supply, 165-FBGA (13x15), 0°C to 70°C.

$21.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1418KV18-250BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

DDR II SRAM for high-throughput data buffers

It clocks at 250 MHz using a double-data-rate interface, meaning data transfers on both edges of the clock for an effective 500 MT/s bandwidth on an 18-bit bus.

250 MHz clock — timing margin in a DDR interface

At 250 MHz the DDR II core delivers a 4 ns clock period, but the double-data-rate nature halves the data valid window to roughly 2 ns. The part's internal pipeline and output hold times are specified for that window, so the FPGA or ASIC controller needs to meet setup/hold at the SRAM pins without excessive PCB trace skew. If the design already runs a 250 MHz DDR controller, this part drops in; if the controller tops out at 200 MHz, a slower speed grade saves cost.

The PCB layout should place a 0.1 µF ceramic cap within 2 mm of each VDD pin, plus a 10 µF bulk cap per quadrant of the 165-FBGA footprint. The 165-FBGA (13x15) package uses a 1.0 mm ball pitch — no via-in-pad required, but the escape routing needs at least two signal layers.

If the system sees -40°C or +85°C, look at the industrial-temperature variants in the same Cypress DDR II family.

For new designs this is a safe selection; for production builds the supply channel is stable through independent distribution.

Frequently asked questions

What is the memory organization of CY7C1418KV18-250BZXC?

The memory is organized as 2M words by 18 bits (2M x 18), giving a total density of 36 Mbit.

Is CY7C1418KV18-250BZXC RoHS compliant?

The part is lead-free and RoHS-compliant as indicated by the 'C' suffix in the order code (BZXC).