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Infineon Technologies CY7C1418KV18-250BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1418KV18-250BZI DDR II SRAM, 36Mbit, 250 MHz

MPNCY7C1418KV18-250BZI
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Infineon CY7C1418KV18-250BZI, Synchronous DDR II SRAM, 36 Mbit (2M x 18), 250 MHz clock, 1.7-1.9 V supply, 165-FBGA (13x15 mm), -40 to 85°C.

$16.3200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1418KV18-250BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

What this DDR II SRAM delivers

The Infineon CY7C1418KV18-250BZI is a 36 Mbit synchronous DDR II SRAM organized as 2M x 18 bits, clocked at 250 MHz. This is a double-data-rate part — data transfers on both rising and falling clock edges, effectively doubling the throughput per pin compared to a single-data-rate synchronous SRAM. The 18-bit word width suits DSP pipelines, parity-protected memory buses, or any application where a narrow-wide data path is preferred over a full 36-bit bus.

165-ball FBGA, 13x15 mm. Parallel interface at 250 MHz.

Frequently asked questions

What is the memory organization of CY7C1418KV18-250BZI?

The 36 Mbit SRAM is organized as 2M words by 18 bits — an 18-bit word width that fits DSP or parity-protected memory buses.

What package does CY7C1418KV18-250BZI use?

It comes in a 165-ball FBGA (13x15 mm) — a fine-pitch BGA requiring controlled-impedance PCB layout and X-ray inspection for reliable solder joints.