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Infineon Technologies CY7C1418KV18-250BZCT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1418KV18-250BZCT 36Mbit DDR II SRAM, 250 MHz

MPNCY7C1418KV18-250BZCT
Active

Infineon CY7C1418KV18-250BZCT, 36Mbit Synchronous DDR II SRAM, 250 MHz clock, 2M x 18 organization, Parallel interface, 1.7V ~ 1.9V supply, 165-FBGA (13x15), 0°C ~ 70°C.

$37.1000Ref. price · indicative, final on quote
Infineon Technologies CY7C1418KV18-250BZCT datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1418KV18-250BZCT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

The Infineon CY7C1418KV18-250BZCT is a 36 Mbit synchronous DDR II SRAM organized as 2M x 18, clocked at 250 MHz. This is a volatile memory part aimed at high-throughput buffer applications — think network packet processors, test equipment, or any design that needs back-to-back read/write cycles without dead bus turns.

250 MHz clock — timing closure and bus margin

At 250 MHz the DDR II interface transfers data on both clock edges.

Package and storage: 165-FBGA (13x15)

The part comes in a 165-ball FBGA, body size 13 mm x 15 mm.

The part is active per the manufacturer.

Frequently asked questions

Does CY7C1418KV18-250BZCT require any special timing or configuration?

As a DDR II synchronous SRAM, it requires a 250 MHz clock and proper setup/hold timing on the parallel interface.