The CY7C1415KV18-300BZXI is a 36 Mbit synchronous SRAM built on the QDR II architecture — quad data rate, meaning it transfers four words per clock cycle on separate read and write ports. The 300 MHz clock yields a peak bandwidth of 1.2 Gwords/s on each port, which is the figure that governs throughput in a packet buffer or lookup table. Organised as 1M x 36 bits, the 36-bit word width matches the data bus of a 36-bit network processor or a 72-bit wide memory controller running two devices in parallel for error correction. The 1.7 V to 1.9 V supply rail aligns with the 1.8 V core voltage common on high-speed ASICs and FPGAs, so no separate voltage regulator is needed for the SRAM bank.
Industrial temperature range and package — board-fit constraints
The 165-ball FBGA (13x15 mm body) is a fine-pitch BGA — the 0.80 mm ball pitch requires a 4-layer PCB minimum for fan-out, and the centre ground pad needs a thermal via array to keep junction temperature within the operating limit under sustained 300 MHz switching. The tray packaging is the standard delivery format for BGA devices that go through a pick-and-place line with a tray feeder. No tape-and-reel variant is listed for this order code, so the tray quantity sets the minimum order increment.
Last Buy lifecycle — what it means for a BOM line
Infineon has placed the CY7C1415KV18-300BZXI into Last Buy status. This means the manufacturer will accept final orders within a defined window, after which the part is discontinued with no further production. For an existing design that already qualifies this QDR II SRAM, the Last Buy window is the time to secure lifetime-buy inventory or to initiate a qualification plan for a drop-in alternative. The 300 MHz speed grade and the 165-FBGA footprint narrow the field of substitutes — a pin-compatible QDR II+ or QDR IV device from the same family would require a board respin if the footprint or the I/O voltage changes.