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Infineon Technologies CY7C1415KV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1415KV18-250BZXI 36Mbit QDR II SRAM, 250 MHz, 165-FBGA

MPNCY7C1415KV18-250BZXI
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Infineon CY7C1415KV18-250BZXI, 36Mbit synchronous QDR II SRAM, 1M x 36 organization, 250 MHz clock, parallel interface, 1.7V-1.9V supply, -40°C to +85°C, 165-FBGA (13x15), tray.

$51.9400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1415KV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

QDR II at 250 MHz — what the clock rate buys you

Industrial temperature range — where it runs

The 1.7V to 1.9V supply rail aligns with the 1.8V core logic common in high-performance FPGAs and ASICs, so the SRAM can share a regulated 1.8V plane with the main processor.

Supplied in a 165-ball FBGA (13x15 mm) with a 1.0 mm ball pitch. Surface-mount only. The 165-FBGA footprint is standard across the CY7C1415KV18 density family, so a board layout designed for the 250 MHz variant accepts the 200 MHz speed grade without a respin.

Frequently asked questions

What is the difference between CY7C1415KV18-250BZXI and CY7C1415KV18-200BZXI?

The only parametric difference is the maximum clock frequency: 250 MHz on this part versus 200 MHz on the -200 suffix. The -250 is the higher-speed bin; if your timing closure closes at 200 MHz, the -200 saves a few cents per unit.

Can I replace CY7C1415KV18-250BZXI with CY7C1415KV18-250BZXC?

They are otherwise identical in speed, density, and package. You can replace the 'I' with the 'C' only if your operating environment never falls below 0°C. For outdoor or unconditioned enclosures, stick with the 'I' grade.