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Infineon Technologies CY7C1414KV18-250BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1414KV18-250BZI QDR II SRAM, 36Mbit, 250 MHz, 165-FBGA

MPNCY7C1414KV18-250BZI
Active

Infineon (Cypress) CY7C1414KV18-250BZI, QDR II synchronous SRAM, 36Mbit (1M x 36), 250 MHz clock, parallel interface, 1.7V–1.9V supply, -40°C to 85°C, 165-ball FBGA (13x15 mm).

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1414KV18-250BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageBulk
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

250 MHz clock, 36 Mbit — what that means for a buffer design

The CY7C1414KV18-250BZI: This is a 36 Mbit QDR II synchronous SRAM organized as 1M x 36, clocked at 250 MHz. The QDR (Quad Data Rate) architecture delivers two data words per clock cycle on independent read and write ports, eliminating bus-turnaround dead cycles.

Package and footprint — 165-ball FBGA, 13x15 mm

The part comes in a 165-ball FBGA with a 13x15 mm body. It is a surface-mount BGA — the standard footprint for high-pin-count synchronous memories.

Frequently asked questions

Is CY7C1414KV18-250BZI obsolete or EOL?

No. The lifecycle status is Active (current production) per Infineon (Cypress).

What is the clock frequency and memory size of CY7C1414KV18-250BZI?

The clock frequency is 250 MHz and the memory size is 36 Mbit, organized as 1M x 36. This is a QDR II synchronous SRAM with independent read and write ports.