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Infineon Technologies CY7C1412KV18-250BZCT — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1412KV18-250BZCT 36Mbit QDR II SRAM, 250MHz, 1.8V

MPNCY7C1412KV18-250BZCT
End of Life

Cypress QDR II SRAM, 36 Mbit, 2M x 18, 250 MHz clock, 1.7 V–1.9 V supply, 165-LBGA, 0 °C–70 °C, tape-and-reel.

$37.1000Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY7C1412KV18-250BZCT Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Frequently asked questions

Does the 165-LBGA footprint of the -250BZCT match the -266BZCT for a drop-in speed-grade upgrade?

Both the -250BZCT and the -266BZCT variants share the same 165-FBGA/LBGA package footprint — the speed grade is a timing bin distinction, not a package change. If your memory controller can operate at 266 MHz, swapping to the -266BZCT is a footprint-compatible upgrade with no board respin required.

What supply voltage does the CY7C1412KV18-250BZCT require, and is 1.8 V nominal within range?

The device specifies 1.7 V to 1.9 V. A nominal 1.8 V rail sits in the middle of that window, which is correct in principle — but the tight ±100 mV margin means your PDN ripple on the 1.8 V plane needs to be characterised and kept within that tolerance to avoid read timing errors.