Skip to main content
Infineon Technologies CY7C1411KV18-250BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1411KV18-250BZC QDR II SRAM, 36Mbit, 250 MHz

MPNCY7C1411KV18-250BZC
Obsolete

Infineon Technologies CY7C1411KV18-250BZC QDR II SRAM, 36Mbit synchronous, 4M x 8 organization, 250 MHz clock, 1.7V-1.9V supply, 0°C-70°C, 165-LBGA (13x15 mm FBGA), tray.

$44.8200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1411KV18-250BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 8

Product details

Memory organization and timing at 250 MHz

The CY7C1411KV18-250BZC: Organized as 4M x 8, the part delivers 36 Mbit of volatile SRAM using a synchronous QDR II architecture. The 250 MHz clock rate supports a double-data-rate interface — data transfers on both edges, yielding an effective throughput of 500 MT/s per I/O pin. The parallel memory interface requires a controller that implements the QDR II protocol, including separate read and write data ports.

Package footprint and board integration

The surface-mount footprint requires a multi-layer PCB with controlled impedance traces for the QDR II bus — the 250 MHz edge rates demand careful signal-integrity simulation, especially for the clock and strobe pairs. Supplied in tray format, the parts are suitable for pick-and-place assembly. The FBGA land pattern should follow the JEDEC MO-216 standard for 165-ball arrays.

Frequently asked questions

Where can I buy CY7C1411KV18-250BZC and how is it quoted?

This part is sourced through independent distribution channels. Submit a request for quote (RFQ) for current status.