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Infineon Technologies CY7C1393JV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1393JV18-300BZXC, 18Mbit DDR II SRAM, 300MHz, 165-LBGA

MPNCY7C1393JV18-300BZXC
Obsolete

Cypress Semiconductor synchronous DDR II SRAM, 18Mbit (1M × 18), 300MHz clock, 1.7V–1.9V supply, parallel interface, 165-LBGA tray, 0°C–70°C operating temperature.

$37.5500Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY7C1393JV18-300BZXC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Frequently asked questions

What replaces the CY7C1393JV18-300BZXC?

No official successor or cross-reference alternative is listed in the available record for this part. A current-production DDR II SRAM in the same density class (18Mbit) and package (165-LBGA or compatible) should be evaluated on a case-by-case basis against the host platform's memory controller requirements.

What is the package type of the CY7C1393JV18-300BZXC?

The part ships in tray packaging, in a 165-LBGA (165-FBGA, 13×15 mm) surface-mount package.

What memory technology does this part use?

It is a synchronous DDR II SRAM — a volatile, high-bandwidth static RAM with a double-data-rate parallel interface, organized as 1M × 18 bits.