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Infineon Technologies CY7C1381KV33-100BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1381KV33-100BZXI 18Mbit Sync SRAM, 100 MHz

MPNCY7C1381KV33-100BZXI
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Infineon CY7C1381KV33-100BZXI, 18 Mbit Synchronous SRAM, 512K x 36 organization, 100 MHz clock, 8.5 ns access time, 3.135 V to 3.6 V supply, -40 to 85 °C, 165-FBGA package, Tray.

$31.8325Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1381KV33-100BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency100 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time8.5 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

18 Mbit synchronous SRAM — 100 MHz pipeline for the bus

The Infineon CY7C1381KV33-100BZXI is an 18 Mbit synchronous SRAM organized 512K x 36, clocked at 100 MHz with an 8.5 ns access time. It is a single-data-rate (SDR) parallel-interface memory intended as a high-speed companion for FPGAs, ASICs, or network processors that need a wide, deterministic data buffer. The 3.135 V to 3.6 V supply range and industrial temperature grade (-40 to 85 °C) suit it for telecom line cards, base stations, and industrial controllers that cannot tolerate the latency of DRAM refresh.

100 MHz clock, 8.5 ns access — timing closure for the memory bus

The 8.5 ns access time from clock edge to data valid is specified at 100 MHz.

165-FBGA package — board-level reality

Industrial temperature grade — where it runs

Frequently asked questions

What is the memory organization of CY7C1381KV33-100BZXI?

It is organized as 512K words by 36 bits, for a total of 18 Mbit.

What is the clock speed and access time for this SRAM?

It runs at 100 MHz clock frequency with an 8.5 ns access time from clock edge to data valid.