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Infineon Technologies CY7C1381D-100BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1381D-100BZI 18Mbit SRAM, 8.5 ns access, 100 MHz

MPNCY7C1381D-100BZI
Obsolete

Cypress CY7C1381D-100BZI, 18Mbit synchronous SDR SRAM, 8.5 ns access, 512K x 36, 100 MHz clock, 3.135–3.6 V, 165-FBGA (13x15 mm), -40°C to 85°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1381D-100BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency100 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageBulk
TechnologySRAM - Synchronous, SDR
Access time8.5 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

The Cypress CY7C1381D-100BZI is an 18 Mbit synchronous SRAM organized 512K x 36, clocked at 100 MHz with an 8.5 ns access time. It operates from a 3.135 V to 3.6 V supply and is rated over the -40°C to 85°C industrial temperature range.

This part is marked obsolete by Cypress.

Frequently asked questions

What is the replacement for CY7C1381D-100BZI?

No official replacement order code is listed in the available documentation for the CY7C1381D-100BZI. For a drop-in footprint and timing match, verify any alternative against the 165-FBGA layout and the 100 MHz / 8.5 ns specs.

What is the access time of CY7C1381D-100BZI?

The access time is 8.5 ns, matched to a 100 MHz clock cycle.