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Infineon Technologies CY7C1380C-167BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1380C-167BZI Infineon SRAM, 18Mbit, 167 MHz, 165-LBGA

MPNCY7C1380C-167BZI
Obsolete

Infineon Technologies CY7C1380C-167BZI synchronous SDR SRAM, 18Mbit (512K x 36), 167 MHz clock, 3.4 ns access time, 3.135V–3.6V supply, -40°C to 85°C, 165-LBGA (13x15 mm), Bag.

$35.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1380C-167BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency167 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBag
TechnologySRAM - Synchronous, SDR
Access time3.4 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

Memory capacity and bus width — 512K x 36, 18 Mbit

Organised as 512K words by 36 bits, the CY7C1380C-167BZI delivers 18 Mbit of synchronous SRAM. The 36-bit wide data bus suits systems that need a full word plus parity or ECC bits in a single access cycle.

Speed grade — 167 MHz clock, 3.4 ns access

The 3.4 ns access defines the timing closure window for the memory controller.

Package — 165-ball LBGA, 13x15 mm

Housed in a 165-ball LBGA (13x15 mm body), the CY7C1380C-167BZI requires a multi-layer PCB for signal fan-out and decoupling.

Frequently asked questions

Where can I buy the CY7C1380C-167BZI and what is the lead time?

The CY7C1380C-167BZI is sourced to order through independent distribution.