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Infineon Technologies CY7C1370KV25-200BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1370KV25-200BZC 18Mbit SRAM, 200 MHz, 165-FBGA

MPNCY7C1370KV25-200BZC
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Infineon Technologies NoBL™ SRAM, CY7C1370KV25-200BZC, 18Mbit synchronous SDR, 512K x 36 organization, 200 MHz clock, 3 ns access time, 2.375-2.625 V supply, 165-LBGA (13x15 mm), tray.

$37.2050Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1370KV25-200BZC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage2.375V ~ 2.625V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

What the 200 MHz clock and 3 ns access mean for your bus timing

The CY7C1370KV25-200BZC is a 18 Mbit synchronous SRAM from Infineon's NoBL™ (No Bus Latency) series, organized 512K x 36. The 200 MHz clock rate sets the maximum data transfer cadence on the parallel bus — each clock edge can initiate a new read or write cycle without dead cycles between back-to-back transactions, which is the defining characteristic of the NoBL™ pipeline. The 3 ns access time is the interval from clock edge to data valid on the output pins. At 200 MHz the clock period is 5 ns, so 3 ns access leaves 2 ns of setup margin before the next clock edge — enough headroom for most FPGA or ASIC interfaces running at this speed, but the trace-length matching and board impedance become critical to hold that margin across temperature.

Supply rail tolerance and temperature grade — where this part fits

The core supply range is 2.375 V to 2.625 V, a tight 250 mV window that requires a regulated rail — a 2.5 V LDO or switching converter with <1% set-point accuracy. The 165-ball FBGA package (13x15 mm body,) uses a 1.0 mm ball pitch — standard for this density. The PCB fan-out requires at least four layers to route the 36 data lines plus address and control signals without excessive via stubs that would degrade signal integrity at 200 MHz.

Frequently asked questions

What is the memory organization and clock speed of this SRAM?

The CY7C1370KV25-200BZC is organized as 512K x 36 bits (18 Mbit total) and operates at a 200 MHz clock frequency with a 3 ns access time. It uses a parallel memory interface and runs on a 2.375 V to 2.625 V supply.

What package does CY7C1370KV25-200BZC use?

It comes in a 165-ball FBGA package with a 13x15 mm body. The shipping package is tray.