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Infineon Technologies CY7C1370KV25-167BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1370KV25-167BZC Infineon 18Mbit SRAM, 167 MHz

MPNCY7C1370KV25-167BZC
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Infineon Technologies NoBL™ synchronous SRAM, CY7C1370KV25-167BZC, 18Mbit (512K x 36), 167 MHz clock, 3.4 ns access, 2.375V–2.625V supply, 0°C to 70°C, 165-FBGA (13x15).

$35.8251Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1370KV25-167BZC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage2.375V ~ 2.625V
Clock frequency167 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3.4 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

18 Mbit synchronous SRAM at 167 MHz — the bus-fit decision

The CY7C1370KV25-167BZC: The 36-bit word width maps directly to a 32-bit data bus plus four parity or ECC bits — no byte-lane muxing required at the controller side. Part of Infineon's NoBL™ (No Bus Latency) series, it eliminates the dead cycle between read and write operations that older pipelined SRAMs impose. For a controller that alternates read and write on every clock, that means full 167 MT/s throughput without wait states.

Core supply range is 2.375 V to 2.625 V — a tight 2.5 V nominal rail. The 165-ball FBGA package (13x15 mm body) uses a 1.0 mm ball pitch. Fan-out on a four-layer board is straightforward; a two-layer board will struggle to route the 36 data lines plus address and control without signal-integrity issues at 167 MHz.

Frequently asked questions

What is CY7C1370KV25-167BZC's listed series?

It is part of the NoBL™ (No Bus Latency) series from Infineon, designed for zero-wait-state back-to-back reads and writes.