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Infineon Technologies CY7C1370DV25-200AXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1370DV25-200AXC 18Mbit NoBL SRAM – Obsolete, 200 MHz

MPNCY7C1370DV25-200AXC
Obsolete

Infineon Technologies NoBL™ series, CY7C1370DV25-200AXC, 18Mbit synchronous SRAM, 512K x 36 organization, 200 MHz clock frequency, 3 ns access time, 100-LQFP package, 2.375V–2.625V supply, 0°C to 70°C operating temperature.

$30.0700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1370DV25-200AXC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage2.375V ~ 2.625V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size18Mbit
Memory formatSRAM
Case100-LQFP
Memory organization512K x 36

Product details

18Mbit NoBL synchronous SRAM at 200 MHz

The CY7C1370DV25-200AXC is a 18Mbit synchronous SRAM from Infineon’s NoBL™ family, organised as 512K x 36. It operates at a 200 MHz clock frequency with a 3 ns access time, delivering fast read/write cycles for pipelined cache or buffer applications. The parallel memory interface and 2.375V–2.625V supply voltage suit low-voltage, high-speed logic environments.

Infineon lists the CY7C1370DV25-200AXC as Obsolete. Any remaining stock on the open market is date-code-limited; verify provenance before committing to a production run. Sourced per RFQ — no stock-holding claim.

The commercial temperature grade limits deployment to indoor, temperature-controlled environments.

Frequently asked questions

What is the replacement for CY7C1370DV25-200AXC?

Infineon has not published an official replacement for this device. The CY7C1370DV25-200BXC (same base part number, different suffix) may share the same die but with a different package or temperature range — confirm pin-compatibility and timing before substituting. No direct second-source is listed.