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Infineon Technologies CY7C1370D-200BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1370D-200BZC NoBL Synchronous SRAM, 18Mbit

MPNCY7C1370D-200BZC
Obsolete

Infineon NoBL™ Synchronous SRAM, CY7C1370D-200BZC, 18Mbit (512K x 36), 200 MHz clock frequency, 3 ns access time, 3.135V–3.6V supply, 165-ball FBGA (13x15 mm), 0°C to 70°C.

$27.8500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1370D-200BZC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

Clocked at 200 MHz with a 3 ns access time, it is built for high-throughput data-path applications such as network packet buffers, telecom line cards, and FPGA co-processing memory where back-to-back read-write throughput matters more than density.

Infineon lists the CY7C1370D-200BZC as obsolete.

The 200 MHz clock rate and 3 ns access time together define the window for setup-and-hold closure on the data bus. At this speed, trace-length matching on the 36-bit data path becomes critical — expect to budget for controlled-impedance routing and on-die termination if your FPGA or ASIC interface runs at the full clock rate. The NoBL feature removes the one-cycle turnaround penalty that standard synchronous SRAMs impose, so a back-to-back read-write sequence at 200 MHz achieves full bus utilisation without dead cycles. That matters in designs where every clock edge carries a valid transaction.

165-ball FBGA — layout and rework considerations

The 165-ball FBGA package measures 13 x 15 mm with a 1.0 mm ball pitch typical of this density class. It requires a multilayer PCB with via-in-pad or microvia fanout for the centre balls. Rework needs a preheat profile that keeps the package body below 220°C peak to avoid internal die-attach stress; a bottom-side preheater at 150°C and a top-side hot-air nozzle matched to the 13 x 15 mm outline is the standard approach.

Frequently asked questions

Is CY7C1370D-200BZC obsolete?

Yes, Infineon lists the CY7C1370D-200BZC as obsolete. No official replacement part number has been published. For new designs, evaluate current-generation synchronous SRAMs in the 165-ball FBGA package, but verify pin compatibility against your layout.

What is the difference between CY7C1370D-200BZC and CY7C1370C-200BZC?

The CY7C1370D-200BZC is the 'D' revision of the 18 Mbit NoBL synchronous SRAM family. The 'C' revision (CY7C1370C-200BZC) is an earlier stepping. Both share the same 512K x 36 organisation, 200 MHz clock, 3 ns access time, and 165-ball FBGA package. The 'D' revision typically incorporates minor timing or process improvements; for a production BOM, verify that the 'C' revision meets your timing margin if you are considering it as a drop-in alternate.